Substrate processing apparatus

ABSTRACT

There is provided a technique that includes: substrate mounting plate where substrates are arranged circumferentially; rotator rotating the substrate mounting plate; gas supply structure disposed above the substrate mounting plate from center to outer periphery thereof; gas supplier including the gas supply structure and controlling supply amount of gas supplied from the gas supply structure; gas exhaust structure installed above the substrate mounting plate at downstream side of the gas supply structure in rotation direction; gas exhauster including the gas exhaust structure and controlling exhaust amount of gas exhausted from the gas exhaust structure; and gas main component amount controller including the gas supplier and the gas exhauster and controlling gas main component amount in the gas supplied from the gas supply structure to the substrates and the gas main component amount in the gas supplied to the substrates from the center to the outer periphery of the mounting plate.

CROSS-REFERENCE TO RELATED APPLICATION

This application is based upon and claims the benefit of priority fromJapanese Patent Application No. 2019-175993, filed on Sep. 26, 2019, theentire contents of which are incorporated herein by reference.

TECHNICAL FIELD

The present disclosure relates to a substrate processing apparatus.

BACKGROUND

In the related art, there is an apparatus which intends tosimultaneously improve a throughput and a processing quality, and isconfigured to supply a gas while revolving a substrate to performdesired substrate processing.

When processing a substrate, it is desirable to uniformly process asurface of the substrate. However, in a case of an apparatus thatrevolves a substrate, situation of supplying a gas to the substrate maybe different between a center side and an outer peripheral side of theapparatus due to restrictions on a form of the apparatus. In that case,it is difficult to perform a uniform in-plane process of the substrate,which leads to a decrease in yield.

SUMMARY

Some embodiments of the present disclosure provide a technique capableof performing a uniform in-plane process of a substrate in an apparatusfor processing the substrate while revolving the substrate.

According to an embodiment of the present disclosure, there is provideda technique that includes: a substrate mounting plate on which aplurality of substrates are arranged in a circumferential direction; arotator configured to rotate the substrate mounting plate; a gas supplystructure disposed above the substrate mounting plate from a center toan outer periphery of the substrate mounting plate; a gas supplierincluding the gas supply structure and configured to control a supplyamount of a gas supplied from the gas supply structure; a gas exhauststructure installed above the substrate mounting plate at a downstreamside of the gas supply structure in a rotation direction; a gasexhauster including the gas exhaust structure and configured to controlan exhaust amount of a gas exhausted from the gas exhaust structure; anda gas main component amount controller including the gas supplier andthe gas exhauster and configured to control a gas main component amountin the gas supplied from the gas supply structure to the substrates,wherein the gas main component amount controller is further configuredto control the gas main component amount in the gas supplied to thesubstrates from the center to the outer periphery of the substratemounting plate.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is an explanatory view for explaining a substrate processingapparatus according to a first embodiment of the present disclosure.

FIG. 2 is an explanatory view for explaining the substrate processingapparatus according to the first embodiment.

FIGS. 3A to 3C are explanatory views for explaining a gas supply partaccording to the first embodiment.

FIG. 4 is an explanatory view for explaining a gas supply structure anda gas exhaust structure according to the first embodiment.

FIG. 5 is an explanatory view for explaining the gas supply structureand the gas exhaust structure according to the first embodiment.

FIG. 6 is an explanatory view for explaining a controller of thesubstrate processing apparatus according to the first embodiment.

FIG. 7 is an explanatory view for explaining a substrate processing flowaccording to the first embodiment.

FIG. 8 is an explanatory view for explaining the substrate processingflow according to the first embodiment.

FIG. 9 is an explanatory view for explaining a state of a substrate tobe processed in the first embodiment.

FIG. 10 is an explanatory view for explaining a substrate processingapparatus according to a second embodiment of the present disclosure.

FIG. 11 is an explanatory view for explaining a gas supply structureaccording to the second embodiment.

FIG. 12 is an explanatory view for explaining a gas exhaust structureaccording to the second embodiment.

FIG. 13 is an explanatory view for explaining the gas supply structureand the gas exhaust structure according to the second embodiment.

FIG. 14 is an explanatory view for explaining a gas supply structureaccording to a third embodiment of the present disclosure.

FIGS. 15A to 15C are explanatory views for explaining the gas supplystructure according to the third embodiment.

FIGS. 16A to 16C are explanatory views for explaining a relationshipbetween the gas supply structure according to the third embodiment andsupply of a gas to a substrate.

DETAILED DESCRIPTION First Embodiment

A first embodiment will be described with reference to the drawings. Theconfiguration of a substrate processing apparatus according to a firstembodiment of the present disclosure will be described mainly withreference to FIGS. 1 and 2. FIG. 1 is a schematic cross-sectional viewof a substrate processing apparatus 200 according to the firstembodiment. FIG. 2 is a schematic longitudinal cross-sectional view ofthe substrate processing apparatus 200 according to the firstembodiment, which is a cross-sectional view taken along a line α-α′ of achamber 302 illustrated in FIG. 1. The line α-α′ is a line directingfrom α to α′ through a center of the chamber 302.

A specific configuration of the substrate processing apparatus 200 willbe described. The substrate processing apparatus 200 is controlled by acontroller 400 to be described later.

As illustrated in FIGS. 1 and 2, the substrate processing apparatus 200mainly includes the chamber 302 which is a cylindrical airtightcontainer. A process chamber 301 configured to process a substrate 100is formed in the chamber 302. A gate valve 305 is connected to thechamber 302, and the substrate 100 is loaded and unloaded through thegate valve 305.

The process chamber 301 includes a processing region 306 into which aprocessing gas is supplied, and a purge region 307 into which a purgegas is supplied. In this embodiment, the processing region 306 and thepurge region 307 are alternately arranged in a circumferentialdirection. For example, a first processing region 306 a, a first purgeregion 307 a, a second processing region 306 b and a second purge region307 b are arranged in this order. As will be described later, a firstgas is supplied into the first processing region 306 a, a second gas issupplied into the second processing region 306 b, and an inert gas issupplied into the first purge region 307 a and the second purge region307 b. Thus, a predetermined process is performed on the substrate 100in accordance with the gas supplied into each region. The processingregion 306 a is also called a first domain, the processing region 306 bis also called a second domain, and the first purge region 307 a and thesecond purge region 307 b are also called purge domains.

The purge region 307 is a region that spatially separates the firstprocessing region 306 a and the second processing region 306 b from eachother. A ceiling 308 of the purge region 307 is configured to be lowerthan a ceiling 309 of the processing region 306. A ceiling 308 a isprovided in the first purge region 307 a, and a ceiling 308 b isprovided in the second purge region 307 b. By lowering each ceiling, thepressure in the space of the purge region 307 is increased. By supplyinga purge gas into this space, adjacent processing regions 306 arepartitioned. Further, the purge gas also has a role of removing anexcessive gas on the substrate 100.

A rotatable substrate mounting plate 317 having its rotary shaft at thecenter of the chamber 302 is installed in the middle of the chamber 302.

The substrate mounting plate 317 is configured such that a plurality ofsubstrates 100 (for example, six substrates 100) can be arranged in thechamber 302 on the same plane and in the same circumferential directionalong a rotation direction. The term “same plane” used herein is notlimited to a completely same plane, but includes a case where aplurality of substrates 100 are arranged so as not to overlap with eachother when the substrate mounting plate 317 is viewed from above.

A concave portion 318′ is formed at a position where the substrate 100is supported on the surface of the substrate mounting plate 317. Thesame number of concave portions 318′ as the number of substrates 100 tobe processed are arranged at equal intervals (for example, at intervalsof 60 degrees) at concentric positions from the center of the substratemounting plate 317. In FIG. 1, illustration thereof is omitted forconvenience of explanation.

Each concave portion 318′ is, for example, circular when viewed from thetop of the substrate mounting plate 317 and is concave when viewed fromthe side thereof. The diameter of the concave portion 318′ may be set tobe slightly larger than the diameter of the substrate 100. A substratemounting surface 319 is formed at the bottom of the concave portion318′, and the substrate 100 can be mounted on the substrate mountingsurface 319 by mounting the substrate 100 in the concave portion 318′.

The substrate mounting plate 317 is fixed to a core 321. The core 321 isinstalled at the center of the substrate mounting plate 317 and has arole of fixing the substrate mounting plate 317. A shaft 322 is disposedbelow the core 321. The shaft 322 supports the core 321.

The lower part of the shaft 322 passes through a hole 323 formed at thebottom of the chamber 302 and is covered with a container 304 that canbe airtight outside the chamber 302. An elevating/rotating part 318 isinstalled at the lower end of the shaft 322. When the shaft 322 is notelevated, the elevating/rotating part 318 is simply referred to as arotating part (or rotator) 318. The elevating/rotating part 318 isconfigured to rotate and elevate the substrate mounting plate 317according to an instruction from the controller 400.

A heater unit 381 including a heater 380 as a heating part is disposedbelow the substrate mounting plate 317. The heater 380 heats each of thesubstrates 100 mounted on the substrate mounting plate 317. The heater380 is disposed circumferentially along the shape of the chamber 302.

A heater control part 387 is connected to the heater 380. The heater 380is electrically connected to the controller 400 and controls supply ofpower to the heater 380 according to an instruction from the controller400 to perform temperature control.

An exhaust structure 386 is disposed on the outer periphery of thesubstrate mounting plate 317. The exhaust structure 386 includes anexhaust groove 388 and an exhaust buffer space 389. The exhaust groove388 and the exhaust buffer space 389 are formed circumferentially alongthe shape of the chamber 302.

An exhaust port 392 is installed at the bottom of the exhaust structure386. The exhaust port 392 mainly exhausts the second gas supplied intothe processing space 306 b and the purge gas supplied from the upstreamthereof. Each gas is exhausted from the exhaust structure 391 and theexhaust port 392 via the exhaust groove 388 and the exhaust buffer space389.

Subsequently, a gas supply part (or a gas supplier) will be described.As illustrated in FIG. 1, the chamber 302 includes a gas supplystructure 410. The gas supply structure 410 is disposed above thesubstrate mounting plate 317. Further, the chamber 302 includes nozzles355, 365 and 366. “A” in FIG. 1 is connected to “A” in FIG. 3A. That is,the gas supply structure 410 is connected to a supply pipe 241. “B” inFIG. 1 is connected to “B” in FIG. 3B. That is, the nozzle 355 isconnected to a supply pipe 251. “C” in FIG. 1 is connected to “C” inFIG. 3C. That is, the nozzles 365 and 366 are connected to a supply pipe261.

Subsequently, the gas supply part will be described with reference toFIGS. 3A to 3C. FIG. 3A illustrates a first gas supply part 240 which isa part of the gas supply part. The details thereof will be describedwith reference to FIG. 3A. The first gas is mainly supplied from thefirst gas supply pipe 241.

At the first gas supply pipe 241, a first gas supply source 242, an MFC243, which is a flow rate controller (flow rate control part), and avalve 244 which is an opening/closing valve are installed in order fromthe upstream side.

A gas containing a first element (hereinafter referred to as the “firstgas”) is supplied from the first gas supply pipe 241 to a shower head230 via the MFC 243, the valve 244 and the first gas supply pipe 241.

The first gas is a precursor gas, that is, one of processing gases. Inthis embodiment, the first element is, for example, silicon (Si). Thatis, the first gas is a Si gas (also referred to as a Si-containing gas),which is a gas containing Si as a main component. Specifically, adichlorosilane (SiH₂Cl₂, abbreviation: DCS) gas is used as the firstgas.

If the first gas is liquid at normal temperature and normal pressure, avaporizer (not shown) may be installed between the first gas supplysource 242 and the MFC 243. Here, the description will be made with thefirst gas as a gas.

The first gas supply part 240 mainly includes the first gas supply pipe241, the MFC 243, the valve 244 and the gas supply structure 410.Further, the first gas supply part 240 may include the first gas supplysource 242.

Subsequently, a second gas supply part 250 which is a part of the gassupply part will be described with reference to FIG. 3B. At the secondgas supply pipe 251, a second gas supply source 252, an MFC 253, whichis a flow rate controller, and a valve 254 are installed in order fromthe upstream side.

Then, a reaction gas reacting with the first gas is supplied from thesecond gas supply pipe 251 into the shower head 230. The reaction gas isalso called a second gas. The second gas is one of the processing gases,for example, a nitrogen-containing gas containing nitrogen as a maincomponent. For example, an ammonia (NH₃) gas is used as thenitrogen-containing gas.

The second gas supply part 250 mainly includes the second gas supplypipe 251, the MFC 253, the valve 254 and the nozzle 355. Since thesecond gas supply part 250 is configured to supply the reaction gas, itis also referred to as a reaction gas supply part. Further, the secondgas supply part 250 may include the second gas supply source 252.

Subsequently, a purge gas supply part 260 which is a part of the gassupply part will be described with reference to FIG. 3C. At the purgegas supply pipe 261, a purge gas supply source 262, an MFC 263, which isa flow rate controller (flow rate control part), and a valve 264 areinstalled in order from the upstream side.

Then, a purge gas is supplied from the purge gas supply pipe 261 intothe shower head 230. The purge gas is a gas that does not react with thefirst gas or the second gas, which is one of purge gases for purging theinternal atmosphere of the process chamber 201, for example, a nitrogen(N₂) gas.

The purge gas supply part 260 mainly includes the purge gas supply pipe261, the WC 263, the valve 264, the nozzle 365 and the nozzle 366. Thepurge gas supply part 260 may include the purge gas supply source 262.

The first gas supply part 240, the second gas supply part 250 and thepurge gas supply part 260 are collectively referred to as a gas supplypart.

Next, a gas exhaust part (or gas exhauster) will be described. Thechamber 302 is provided with a gas exhaust structure 420 and an exhaustport 392. The gas exhaust structure 420 is disposed above the substratemounting plate 317. An exhaust pipe 334 a is installed so as tocommunicate with the gas exhaust structure 420. A vacuum pump 334 b,which is a vacuum exhaust device, is connected to the exhaust pipe 334 avia a valve 334 d, which is an opening/closing valve, and an autopressure controller (APC) valve 334 c which is a pressure regulator(pressure adjustment part). The vacuum pump 334 b is configured tovacuum-exhaust the interior of the process chamber 301 so that theinternal pressure of the process chamber 301 becomes a predeterminedpressure (degree of vacuum).

The exhaust pipe 334 a, the valve 334 d, the APC valve 334 c and the gasexhaust structure 420 are collectively referred to as a first gasexhaust part 334. The first gas exhaust part 334 may include the vacuumpump 334 b.

In addition, a second gas exhaust part 335 is installed so as tocommunicate with the exhaust port 392. The exhaust port 392 is formed onthe downstream side of the processing region 306 b in the rotationdirection. The second gas exhaust part 335 mainly exhausts the secondgas and the inert gas.

An exhaust pipe 335 a, which is a part of the second gas exhaust part335, is installed so as to communicate with the exhaust port 392. Avacuum pump 335 b, which is a vacuum exhaust device, is connected to theexhaust pipe 335 a via a valve 335 d, which is an opening/closing valve,and an APC valve 335 c which is a pressure regulator (pressureadjustment part). The vacuum pump 335 b is configured to vacuum-exhaustthe interior of the process chamber 301 so that the internal pressure ofthe process chamber 301 becomes a predetermined pressure (degree ofvacuum).

The exhaust pipe 335 a, the valve 335 d and the APC valve 335 c arecollectively referred to as a second gas exhaust part 335. The secondgas exhaust part 335 may include the vacuum pump 335 b.

The first gas supply part 240 and the first gas exhaust part 334 arecollectively referred to as a first gas main component amount controlpart (or a first gas main component amount controller). The first gasmain component amount control part controls an amount of gas maincomponent in the first gas supplied to the substrate that passes belowthe gas supply structure 410 and the gas exhaust structure 420 by usingone of the first gas supply part 240 and the first gas exhaust part 334or interlocking of the two parts 240 and 334.

The second gas supply part 250 and the second gas exhaust part 335 arecollectively referred to as a second gas main component amount controlpart (or a second gas main component amount controller). The second gasmain component amount control part controls an exposure amount of thesecond gas supplied to the substrate that passes below the nozzle 355 byusing one of the second gas supply part 250 and the second gas exhaustpart 335 or interlocking of the two parts 250 and 335.

Next, a relationship between the gas supply structure 410 and the gasexhaust structure 420 will be described with reference to FIGS. 1, 4 and5. FIG. 4 is an explanatory view of the gas supply structure 410 and thegas exhaust structure 420 as viewed from the outer periphery of thesubstrate mounting plate 317 toward the center thereof “R” in FIG. 4 isthe same as “R” in FIG. 1 and denotes the rotation direction of thesubstrate mounting plate 317.

FIG. 5 is an explanatory view of the gas supply structure 410 and thegas exhaust structure 420 as viewed from above. In FIG. 5, the directionof an arrow C indicates the center side of the substrate mounting plate317, and the direction of an arrow E indicates the outer peripheral sideof the substrate mounting plate 317. “R” in FIG. 5 is the same as “R” inFIG. 1 and denotes the rotation direction of the substrate mountingplate 317. In FIG. 5, W1, W2 and W3 denote arbitrary locations on thesubstrate 100. W2 denotes the center position of the substrate 100, W1denotes a position of the substrate 100 closer to the center side of thesubstrate mounting plate 317 than W2, and W3 denotes a position of thesubstrate 100 closer to the outer periphery of the substrate mountingplate 317 than W2.

The gas supply structure 410 mainly includes a housing 411. A bufferspace 412 is formed inside the housing 411. A hole 413 is formed abovethe buffer space 412, and a hole 414 is formed below the buffer space412. The hole 413 communicates with the supply pipe 241. A gas suppliedfrom the first gas supply part 240 is supplied to the substrate 100 viathe hole 413, the buffer space 412 and the hole 414.

The gas exhaust structure 420 mainly includes a housing 421. A bufferspace 422 is formed inside the housing 421. A hole 423 is formed belowthe buffer space 422, and a hole 424 is formed above the buffer space422. The hole 424 communicates with the first gas exhaust part 334. Agas supplied from the gas supply structure 410 is exhausted through thehole 423, the buffer space 422 and the hole 424.

As illustrated in FIG. 5, when the gas supply structure 410 is viewedfrom above, the housing 411 is formed in a U-shape with the gas exhauststructure 420 side released. As indicated by a dotted line in FIG. 5,the hole 414 is formed along the outer peripheral shape of the substrate100. The hole 414 has a U-shape with the exhaust structure 420 sidereleased in the same manner as the housing 411. In this embodiment, acontinuous hole shape is used. However, a structure in which a pluralityof holes are arranged along the outer periphery of the substrate 100 maybe used.

When the gas exhaust structure 420 is viewed from above, the housing 421is formed in a U-shape with the gas supply structure 410 side released.The hole 423 is formed along the shape of the housing 421. As indicatedby a dotted line in FIG. 5, the hole 423 is formed along the outerperipheral shape of the substrate 100. The hole 423 has a U-shape withthe supply structure 410 side released, in the same manner as thehousing 421. In this embodiment, a continuous hole shape is used.However, a structure in which a plurality of holes are arranged alongthe outer periphery of the substrate may be used.

As will be described later, the substrate 100 is in a state where manygrooves are formed. In this case, a film is formed on the surface of apillar that forms a wall of the groove. The grooves are formed on theentire surface of the substrate 100. Therefore, when the surface of thesubstrate 100 is divided into a plurality of regions in a directionperpendicular to a moving direction of the substrate 100, the surfacearea is different between a middle region of the substrate 100 and alateral region of the substrate 100. In FIG. 5, the surface area isdifferent among a lateral region 110, which is on the center side of thesubstrate mounting plate 317 and includes the point W1, a middle region120, which includes the point W2, and a lateral region 110 which is onthe outer peripheral side of the substrate mounting plate 317 andincludes the point W3.

More specifically, the surface area of the middle region 120 is largerthan the surface area of each of the lateral regions 110 and 130. Thisis because a length of the moving direction of the substrate 100 in themiddle region 120 is larger than a length of the moving direction of thesubstrate 100 in the lateral regions 110 and 130. It is assumed that theregions have the same width in the direction perpendicular to the movingdirection.

As a result of intensive studies, the inventors have found that a gasconsumption is proportional to the surface area of the substrate 100.Therefore, the region 120 having the largest surface area has thelargest gas consumption. The region 110 and the region 120 have a gasconsumption smaller than that of the region 120.

Therefore, in the present technique, a gas supply amount, that is, anamount of the main component of the gas is set according to the gasconsumption. Specifically, in the substrate 100, the distance betweenthe hole 414 of the gas supply structure 410 and the hole 423 of the gasexhaust structure is set to a distance corresponding to the length ofthe substrate 100 so that a gas supply time according to the length inthe moving direction is obtained.

For example, in the region 120, a distance between the hole 414 and thehole 423 (a distance Lb between 414 b and 423 b in FIG. 5, also referredto as a first distance) is set to a predetermined distance correspondingto the length of the region 120. Further, in the region 110, a distancebetween the hole 414 and the hole 423 (a distance La between 414 a and423 a in FIG. 5, also referred to as a second distance) is set to adistance corresponding to the length of the region 110. As describedabove, since the surface area of the region 120 is larger than that ofthe region 110, the distance La is smaller than the distance Lb.

When the width of the region 110 is equal to the width of the region130, the distance La is set to be equal to a distance Lc.

In this way, since the distance between the supply hole and the exhausthole is set in accordance with the length of the substrate 100 in thetraveling direction, a gas does not run out in any region on thesubstrate, and therefore, it is possible to perform uniform processingin the surface of the substrate.

Subsequently, the controller 400 will be described with reference toFIG. 6. The substrate processing apparatus 200 includes the controller400 that controls operations of respective parts of the substrateprocessing apparatus 200. The controller 400 includes at least anarithmetic part (CPU) 401, a non-transitory storage part 402, a storagepart 403 and a transmitting/receiving part 404. The controller 400 isconnected to the respective parts of the substrate processing apparatus200 via the transmitting/receiving part 404, calls a program or a recipefrom the storage part 403 in accordance with an instruction from ahigher-level controller or a user, and controls the operations of therespective parts according to contents of the called program or recipe.The controller 400 may be configured as a dedicated computer or ageneral-purpose computer. For example, the controller 400 according tothe present embodiment may be configured by providing an externalstorage device (for example, a magnetic tape, a magnetic disk such as aflexible disk or a hard disk, an optical disk such as a CD or a DVD, amagneto-optical disk such as an MO, a semiconductor memory such as a USBmemory (USB Flash Drive) or a memory card, etc.) 412 storing theabove-described program and installing, on the general-purpose computer,a program using the external storage device 512. The means for supplyingthe program to the computer is not limited to the case where the programis supplied via the external storage device 512. For example, acommunication means such as the Internet or a dedicated line may beused, or information may be received from a host device 520 via thetransmitting/receiving part 404 and the program may be supplied withoutpassing through the external storage device 512. Further, the controller400 may be instructed using an input/output device 513 such as akeyboard or a touch panel.

The storage part 402 and the external storage device 512 are configuredas a computer-readable recording medium. Hereinafter, these arecollectively referred to simply as a recording medium. In the presentdisclosure, when the term “recording medium” is used, it may include thestorage part 402 alone, the external storage device 512 alone, or both.

(Substrate Processing Flow)

Next, a substrate processing flow will be described with reference toFIGS. 7 and 8. FIG. 7 is a flowchart illustrating a substrate processingflow according to the present embodiment. FIG. 8 is a flowchartillustrating details of a film-forming step S330. In the followingdescription, the operations of respective parts of the substrateprocessing apparatus 200 are controlled by the controller 400.

Here, an example in which a silicon-containing gas is used as the firstgas, an ammonia gas is used as the second gas, and a silicon nitride(SiN) film is formed as a thin film on the substrate 100 will bedescribed.

A substrate loading/mounting step will be described. Illustrationthereof is omitted in FIG. 7. The substrate mounting plate 317 isrotated to move the concave portion 318′ to a position facing the gatevalve 305. Next, lift pins (not shown) are lifted up to pass throughthrough-holes (not shown) of the substrate mounting plate 317.Subsequently, the gate valve 305 is opened such that the chamber 302communicates with a vacuum transfer chamber (not shown). Then, thesubstrate 100 is transferred from the transfer chamber onto the liftpins using a wafer transfer device (not shown), and then the lift pinsare moved down. As a result, the substrate 100 is held in a horizontalposture on the concave portion 318′.

As illustrated in FIG. 9, a plurality of pillars 101 and extremelynarrow grooves 102 each having a high aspect ratio and formed betweenthe pillars 101 are formed in the loaded substrate 100. In thissubstrate processing flow, a film is formed on a surface of the pillar101.

When the substrate 100 is supported on the concave portion 318′, thesubstrate mounting plate 317 is rotated so that a concave portion 318′on which the substrate 100 is not mounted faces the gate valve 305.Thereafter, similarly, the substrate is placed on the concave portion318′. The flow is repeated until the substrate 100 is placed on all theconcave portions 318′.

After the substrate 100 is placed on each of the concave portions 318′,the substrate transfer device is retracted outside the substrateprocessing apparatus 200, and the gate valve 305 is closed to seal theinterior of the chamber 302.

When the substrate 100 is mounted on the substrate mounting plate 317,electric power is supplied to the heater 380 in advance to control thesurface of the substrate 100 to be at a predetermined temperature. Thetemperature of the substrate 100 is, for example, 400 degrees C. or moreand 500 degrees C. or less. The heater 380 is kept energized at least ina period from the time of the substrate loading/mounting step to the endof a substrate unloading step to be described later.

A substrate mounting plate rotation starting step S310 will bedescribed. When the substrate 100 is placed in each concave portion318′, the rotating part 324 rotates the substrate mounting plate 317 inthe R direction. By rotating the substrate mounting plate 317, thesubstrate 100 is moved in the order of the first processing region 306a, the first purge region 307 a, the second processing region 306 b andthe second purge region 307 b.

A gas supply starting step S320 will be described. When the substrate100 is heated to reach a desired temperature and the substrate mountingplate 317 reaches a desired rotation speed, the valve 244 is opened tostart supplying a silicon-containing gas into the first processingregion 306 a. At the same time, the valve 254 is opened to supply an NH₃gas into the second processing region 306 b.

At this time, the MFC 243 is adjusted so that a flow rate of thesilicon-containing gas becomes a predetermined flow rate. The supplyflow rate of the silicon-containing gas is, for example, 50 sccm or moreand 500 sccm or less.

In addition, the MFC 253 is adjusted so that the flow rate of the NH₃gas becomes a predetermined flow rate. The supply flow rate of the NH₃gas is, for example, 100 sccm or more and 5,000 sccm or less.

After the substrate loading/mounting step S310, subsequently, theinterior of the process chamber 301 is exhausted by the first gasexhaust part 334 and the second gas exhaust part 335, and an N₂ gas as apurge gas is supplied from the inert gas supply part 260 into the firstpurge region 307 a and the second purge region 307 b.

A film-forming step S330 will be described. Here, a basic flow of thefilm-forming step S330 will be described, and the details thereof willbe described later. In the film-forming step S330, in each substrate100, a silicon-containing layer is formed in the first processing region306 a, and further, the silicon-containing layer reacts with the NH₃ gasin the rotated second processing region 306 b to thereby form asilicon-containing film on the substrate 100. The substrate mountingplate 317 is rotated a predetermined number of times so that thesilicon-containing film has a desired film thickness.

A gas supply stopping step S340 will be described. After the substratemounting plate 317 is rotated the predetermined number of times, thevalves 244 and 254 are closed to stop the supply of thesilicon-containing gas into the first processing region 306 a and thesupply of the NH₃ gas into the second processing region 306 b.

A substrate mounting plate rotation stopping step S350 will bedescribed. After the gas supply stopping step S340, the rotation of thesubstrate mounting plate 317 is stopped.

A substrate unloading step will be described. Illustration thereof isomitted in FIG. 7. The substrate mounting plate is rotated to move thesubstrate 100 to be unloaded to a position facing the gate valve 305.After that, the substrate is unloaded in reverse as compared with themethod of loading the substrate. These operations are repeated until allthe substrates 100 are unloaded.

Subsequently, the details of the film-forming step S330 will bedescribed with reference to FIG. 8. FIG. 8 is a flowchart with onesubstrate as the subject. During the film-forming step S330, a pluralityof substrates 100 are sequentially passed through the first processingregion 306 a, the first purge region 307 a, the second processing region306 b and the second purge region 307 b by the rotation of the substratemounting plate 317.

A first gas supplying step S202 will be described. In the first gassupplying step S202, a silicon-containing gas is supplied to thesubstrate 100 when the substrate 100 passes through the first processingregion 306 a. The supplied silicon-containing gas is decomposed to forma silicon-containing layer in the groove 102.

A first purge step S204 according to the present embodiment will bedescribed. The substrate 100 is moved to the first purge region 307 aafter passing through the first processing region 306 a. When thesubstrate 100 passes through the first purge region 307 a, the component104 of the silicon-containing gas that could not form a strong couplingon the substrate 100 in the first processing region 306 a is removedfrom the substrate 100 by an inert gas.

A second gas supplying step S206 will be described. The substrate 100 ismoved to the second processing region 306 b after passing through thefirst purge region 307 a. The silicon-containing gas component in thegroove 102 reacts with the NH₃ gas component, and a cutsilicon-containing gas component and the NH₃ gas component are coupledto form a silicon-containing layer having a degree of coupling.

A second purge step S208 will be described. After passing through thesecond processing region 306 b, the substrate 100 is moved to the secondpurge region 307 b. When the substrate 100 passes through the secondpurge region 307 b, a HCl or NH₄Cl gas desorbed from the layer on thesubstrate 100 in the second processing region 306 c or a surplus gas isremoved from the substrate 100 by an inert gas.

In this way, at least two second gases that react with each other aresequentially supplied to the substrate. The above-described first gassupplying step S202, first purge step S204, second gas supplying stepS206 and second purge step S208 are defined as one cycle.

A determining step S210 will be described. The controller 400 determineswhether the one cycle has been performed a predetermined number oftimes. Specifically, the controller 400 counts the number of rotationsof the substrate mounting plate 317.

When the one cycle has not been performed a predetermined number oftimes (“NO” in S210), the rotation of the substrate mounting plate 317is further continued to repeat the cycle including the first gassupplying step S202, the first purge step S204, the second gas supplyingstep S206 and the second purge step S208. A thin film is formed bylaminating layers in this manner.

When the one cycle has been performed a predetermined number of times(“YES” in S210), the film-forming step S330 is ended. In this manner, byperforming the one cycle a predetermined number of times, a laminatedthin film having a predetermined thickness is formed. Thus, a film isformed in the groove 102.

As described above, since the amount (i.e., concentration) of gas maincomponent can be adjusted according to the state of the substrate (thesurface area of the substrate in this embodiment), uniform processingcan be performed on the surface of the substrate, which can lead toincrease in yield.

The gas supply structure 410 and the gas exhaust structure 420 may bereplaceable according to the state of the substrate. For example, wheninformation on the surface area of a substrate to be processed next isreceived, the gas supply structure 410 and the gas exhaust structure 420are replaced according to the surface area.

Second Embodiment

Subsequently, a second embodiment will be described. The secondembodiment is different from the first embodiment in terms of the gassupply structure and the gas exhaust structure of the processing region306 a. Other configurations are the same. Hereinafter, the differenceswill be mainly described.

In the second embodiment, as illustrated in FIG. 10, a gas supplystructure 430 is used as the gas supply structure of the processingregion 306 a. Further, a gas exhaust structure 440 is used as the gasexhaust structure.

Subsequently, an apparatus configured to revolve the substrate 100 suchas the substrate processing apparatus 200 will be described. As a resultof intensive studies, the inventors have found that in the case of arevolution type apparatus, a concentration of a gas supplied to thesubstrate differs between the center side and the outer peripheral sideof the substrate mounting plate 317. This is presumably because themoving speed of the substrate is different between an arbitrary point onthe center side and an arbitrary point on the outer peripheral side.

To explain with reference to FIG. 13, than the moving distance of anarbitrary point W3 on the outer peripheral side of the substrate 100 islarger than the moving distance of an arbitrary point W1 on the centerside of the substrate 100. This is because the point W3 moves fasterthan the point W1. When the gas supply amount on the center side of thesubstrate mounting plate 317 is equal to the gas supply amount on theouter peripheral side of the substrate mounting plate 317, since the gassupply time of the point W3 becomes short under a supply hole, the pointW3 is shorter in the gas supply time than the point W1. As a result, agas concentration at the point W3 is lower than a gas concentration atthe point W1.

If the gas concentration, especially a concentration of gas maincomponent, is different, the state of film such as a film thickness orthe concentration of gas main component in the film may be different.This is because the amount of gas main component is different.Therefore, the yield may be reduced.

The technique according to the present embodiment is a technique formaking the amount of gas main component uniform on the center side andthe outer peripheral side of the substrate mounting plate 317, andspecific examples thereof will be described below with a specificexample thereof.

The gas supply structure 430 will be described with reference to FIG.11. The gas supply structure 430 includes a supply buffer structure 431and a supply pipe 432 connected thereto. A plurality of supply bufferstructures 431 are installed in the radial direction of the substratemounting plate 317. In FIG. 11, supply buffer structures 431 a, 431 band 431 c are installed in this order from the center of the substratemounting plate 317.

A hole 436 is formed in the lower surface of the supply buffer structure431. A gas in the supply buffer structure 431 is supplied toward thesubstrate mounting plate 317 through the hole 436. The supply pipes 432are installed corresponding to the respective supply buffer structures431. A supply buffer structure 431 a has a hole 436 a to which a supplypipe 432 a is connected. A supply buffer structure 431 b has a hole 436b to which a supply pipe 432 b is connected. A supply buffer structure431 c has a hole 436 c to which a supply pipe 432 c is connected. Thesupply buffer pipes 431 merges in the upstream and is connected to ajunction pipe 433. The junction pipe 433 is connected to the first gassupply part 240.

At the supply pipe 432, an MFC 434 and a valve 435 are installed fromthe upstream side. An MFC 434 a and a valve 435 a are installed at thesupply pipe 432 a, an MFC 434 b and a valve 435 b are installed at thesupply pipe 432 b, and an MFC 434 c and a valve 435 c are installed atthe supply pipe 432 c, respectively.

With this configuration, the gas supply amount of the gas to be suppliedto the substrate 100, that is, the amount of gas main component, can becontrolled for each supply buffer structure 431.

Subsequently, the gas exhaust structure 440 will be described withreference to FIG. 12. The gas exhaust structure 440 includes an exhaustbuffer structure 441 and an exhaust pipe 442 connected thereto. Aplurality of exhaust buffer structures 441 are installed in the radialdirection of the substrate mounting plate 317. In FIG. 12, exhaustbuffer structures 441 a, 441 b and 441 c are installed in this orderfrom the center of the substrate mounting plate 317.

A hole 446 is formed in the lower surface of the exhaust bufferstructure 441. A gas under the exhaust buffer structure 441 is movedinto the exhaust buffer structure 441 through the hole 446. The exhaustpipes 442 are installed corresponding to the respective exhaust bufferstructures 441. Specifically, an exhaust buffer structure 441 a has ahole 446 a to which an exhaust pipe 442 a is connected. An exhaustbuffer structure 441 b has a hole 446 b to which an exhaust pipe 442 bis connected. An exhaust buffer structure 441 c has a hole 446 c towhich an exhaust pipe 442 c is connected. The respective exhaust pipes442 are joined in the downstream and are connected to a junction pipe443. The junction pipe 443 is connected to the first gas exhaust part334.

At the exhaust pipe 442, a valve 444 and an APC valve 445 may beinstalled from the upstream side. A valve 444 a and an APC valve 445 amay be installed at the exhaust pipe 442 a, a valve 444 b and an APCvalve 445 b may be installed at the exhaust pipe 442 b, and a valve 444c and an APC valve 445 c may be installed at the exhaust pipe 442 c.

With this configuration, the amount of gas exhausted can be controlledfor each exhaust buffer structure 441.

Next, the relationship between the hole 436 of the supply bufferstructure 431 and the hole 446 of the exhaust buffer structure 441 willbe described with reference to FIG. 13. In the figure, W1, W2 and W3denote arbitrary points on the substrate. An arbitrary point W1indicates a point on the center side of the substrate mounting plate 317in the substrate 100. An arbitrary point W2 indicates a point on theouter peripheral side of the substrate mounting plate 317 with respectto W1. An arbitrary point W3 indicates a point on the outer peripheralside of the substrate mounting plate 317 in the substrate 100 withrespect to W2. A revolution orbit Ra indicates the orbit of thearbitrary point W1, a revolution orbit Rb indicates the orbit of thearbitrary point W2, and a revolution orbit Rc indicates the orbit of thearbitrary point W3.

As illustrated in FIG. 13, the holes 436 and the holes 446 correspond toeach other on the revolution orbit of the substrate 100. Specifically,the hole 436 a and the hole 446 a correspond to each other on therevolution orbit Ra of the arbitrary point W1. The hole 436 b and thehole 446 b correspond to each other on the revolution orbit Rb of thearbitrary point W2. The hole 436 c and the hole 446 c correspond to eachother on the revolution orbit Rc of the arbitrary point W3.

As described above, since the gas supply amount can be controlled ineach supply buffer structure 431 and a gas exhaust amount can becontrolled in each exhaust buffer structure 441, a gas flow can beindividually formed between the corresponding supply buffer structure431 and exhaust buffer structure 441, and the gas supply amount to thesubstrate 100 can be controlled. That is, the gas supply amount can beindividually controlled on the center side and the outer peripheral sideof the substrate mounting plate 317. Therefore, the amounts of gas maincomponents can be individually controlled.

With such a structure, the gas supply amount on the outer peripheralside where the moving distance thereof is long can be made larger thanthat on the center side where the moving distance thereof is short. Thatis, at any point on the substrate, the supply amount of main componentof a gas to be exposed can be made equal between the outer peripheralside and the center side. This can result in improvement in in-planeuniformity of the substrate 100 and increase in yield.

Further, since the moving distance of the substrate 100 graduallyincreases from the center to the outer periphery of the substratemounting plate 317, for example, three or more supply buffer structures431 and three or more exhaust buffer structures 441 may be installed asillustrated in FIG. 13. In this case, the gas supply amountcorresponding to the moving distance can be more precisely controlled.

Since such control is possible, it is possible to process substrateshaving different surface areas. For example, even for a substrate havinga larger surface area and a substrate having a smaller surface area, asupply amount of gas main component can be controlled according to theirrespective states.

In this case, a table obtained by comparing the state of the substratewith the supply amount of gas main component is stored in the storagepart 403 in advance. Information on the state of a substrate 100 to beprocessed next, for example, surface area information, is received fromthe host device 520 and stored in the storage part 403. The CPU 401compares the information with the table, reads a control value of thegas main component amount control part (or the gas main component amountcontroller) according to the information, and controls the gas maincomponent amount control part.

In this way, even when substrates having different surface areas areprocessed, the in-plane uniformity of the substrate in each state can beimproved, which can result in the increase in yield.

In the present disclosure, the substrate having the larger surface arearefers to, for example, a substrate having a large number of circuitpatterns such as a plurality of deep grooves, and the substrate havingthe small surface area refers to, for example, a substrate having asmall number of circuit patterns such as a plurality of relativelyshallow grooves.

Third Embodiment

Subsequently, a third embodiment will be described with reference toFIGS. 14, 15A to 15C, and 16A to 16C. The third embodiment is differentfrom the second embodiment in terms of the supply buffer structure inthe apparatus form. Others have the same structure. Hereinafter, thedifferences will be mainly described. In FIG. 14, the direction of anarrow C indicates the center direction of the substrate mounting plate317, and the direction of an arrow E indicates the outer peripheraldirection of the substrate mounting plate 317. In FIG. 14, the rear sideis an upstream side in the rotation direction, and the front side is adownstream side in the rotation direction.

FIGS. 15A to 15C are explanatory views illustrating a relationshipbetween a supply buffer structure 451 and a hole 456 to be describedbelow. FIG. 15A illustrates a supply buffer structure 451 a, FIG. 15Billustrates a supply buffer structure 451 b, and FIG. 15C illustrates asupply buffer structure 451 c. In FIGS. 15A to 15C, “R” denotes therotation direction of the substrate mounting plate 317. The substrate100 is moved below each supply buffer structure 451 in the R direction.

FIGS. 16A to 16C are explanatory views illustrating a relationshipbetween each supply hole 456 and the concentration of the gas suppliedto the substrate 100. The gas concentration is also referred to as aconcentration of gas main component. In the figure, reference numeral460 denotes a gas supplied from the hole 456. Further, in the gas 460, aportion having a high concentration closest to the hole 456 is denotedby 461, and portions denoted by 462 and 463 are sequentially set as adistance from the hole 456 increases. Since the gas 460 diffuses as thegas moves away from the hole 456, the gas concentration also decreasesas the gas moves away from the supply hole 456. Therefore, the gasconcentration becomes 461>462>463.

In FIGS. 16A to 16C, the substrate 100 is moved in the R direction undereach buffer structure 451. Here, the point W1 passes under the bufferstructure 451 a, the point W2 passes under the buffer structure 451 b,and the point W3 passes below the buffer structure 451 c.

As described above, the point W1 indicates a point in the substrate 100on the center side of the substrate mounting plate 317. The point W2indicates a point in the substrate 100 on the outer peripheral side ofthe substrate mounting plate 317 with respect to W1. The point W3indicates a point in the substrate 100 on the outer peripheral side ofthe substrate mounting plate 317 with respect to W2.

Next, a specific structure will be described. Similar to the supplybuffer structure 431, a plurality of supply buffer structures 451 areinstalled from the center to the outer periphery of the substratemounting plate 317. In FIG. 14, from the center side, the supply bufferstructure 451 a, the supply buffer structure 451 b and the supply bufferstructure 451 c are installed in this order.

Each supply buffer structure 451 is connected to the supply pipe 432.The supply pipe 432 a is connected to the supply buffer structure 451 a,the supply pipe 432 b is connected to the supply buffer structure 451 b,and the supply pipe 432 c is connected to the supply buffer 451 c.

Each supply buffer structure 451 has the hole 456. The supply bufferstructure 451 a has a hole 456 a, the supply buffer structure 451 b hasa hole 456 b, and the supply buffer structure 451 c has a hole 456 c. Agas supplied to the supply buffer structure 451 is supplied to thesubstrate 100 via the hole 456.

As illustrated in FIGS. 15A to 15C, the openings of the holes 456 areformed at different inclination angles with respect to the surface ofthe substrate 100. For example, the hole 456 a is formed to be parallelto the surface of the substrate 100 or face toward the substratemounting plate 317. The hole 456 c is formed to face toward a directionperpendicular to the surface of the substrate 100. The hole 456 b isformed to have an angle between the angle of the hole 456 a and theangle of the hole 456 c. In this way, the opening direction of the hole456 gradually face toward the surface of the substrate from the centerto the outer periphery.

Subsequently, the concentration of the gas supplied to the substrate 100in the above configuration will be described with reference to FIGS. 16Ato 16C. As illustrated in FIGS. 16A to 16C, a distance between thesupply hole 456 and the substrate 100 decreases as the supply hole 456faces toward the substrate 100. As described above, the gasconcentration increases as a distance from the supply hole decreases. InFIGS. 16A to 16C, since the supply hole 456 is closest to the substrate100 in (c) and farthest from the substrate 100 in (a), when the supplybuffer structure 451 a, the supply buffer structure 451 b, and thesupply buffer structure 451 c are at the same height as illustrated inFIG. 14, the concentration of the gas supplied to the substrate 100 maybe (c)>(b)>(a).

As described above, in the revolution type apparatus, when the centerside and the outer peripheral side of the substrate mounting plate 317have the same supply amount, the amount of gas main component on theouter peripheral side decreases.

In the present embodiment, the gas concentration at the point W1 iscontrolled to be lower than the gas concentration at the point W3, andthe supply amounts of gas main components at the points W1 and W3 arecontrolled to be the same. Thus, a process in the plane of the substrate100 can be made uniform. Therefore, a film quality such as a filmthickness and a concentration of main component in the film can be madeuniform, which can result in the increase in yield.

Since such control is possible, it is possible to process substrateshaving different surface areas. For example, even for a substrate havinga larger surface area and a substrate having a smaller surface area, thesupply amount of gas main component can be controlled according to theirrespective states.

In this case, a table obtained by comparing the state of the substratewith the supply amount of gas main component is stored in the storagepart 403 in advance. Information on the state of a substrate 100 to beprocessed next, for example, surface area information, is received fromthe host device 520 and stored in the storage part 403. The CPU 401compares the information with the table, and reads a control value gasof the gas main component amount control part according to theinformation, and controls the gas main component amount control part.

In this way, even when the substrates having different surface areas areprocessed, the in-plane uniformity of the substrate in each state can beimproved, which can result in the increase in yield.

Other Embodiments

The first to third embodiments of the present disclosure have beenspecifically described above. However, the present disclosure is notlimited to the above-described embodiments, but may be modified indifferent ways without departing from the spirit and scope of thepresent disclosure.

In the present disclosure, a structure in which the gas supply structure410 and the gas exhaust structure 420 are disposed in the firstprocessing region and a configuration corresponding to the gas supplystructure 410 and the gas exhaust structure 420 is not disposed in thesecond processing region 306 b has been described as an example. This isbecause the reaction gas supplied to the second processing region hasthe following properties as an example. That is, this is an example inwhich the reaction gas has a property of being saturated or a propertyclose to saturation when reacting with the precursor gas supplied to thefirst processing region.

Therefore, when the reaction gas has a property of being not saturatedwhen reacting with the precursor gas, particularly a property that isfar from the saturation, the configuration corresponding to the gassupply structure 410 and the gas exhaust structure 420 may be disposedin the second processing region 306 b.

Further, the gas supply structure and the gas exhaust structure in thefirst embodiment may be divided into a plurality of supply bufferstructures and exhaust buffer structures as in the second embodiment.Thus, the amount of gas main component can be adjusted more precisely.

In the present disclosure, the expression “the same” includes not onlyexactly the same but also substantially the same including some errors.

According to the embodiments of the present disclosure, it is possibleto provide a technique capable of performing a uniform in-plane processof a substrate in an apparatus for processing the substrate whilerevolving the substrate.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the disclosures. Indeed, the embodiments described herein maybe embodied in a variety of other forms. Furthermore, various omissions,substitutions and changes in the form of the embodiments describedherein may be made without departing from the spirit of the disclosures.The accompanying claims and their equivalents are intended to cover suchforms or modifications as would fall within the scope and spirit of thedisclosures.

What is claimed is:
 1. A substrate processing apparatus comprising: asubstrate mounting plate on which a plurality of substrates are arrangedin a circumferential direction; a rotator configured to rotate thesubstrate mounting plate; a gas supply structure disposed above thesubstrate mounting plate from a center to an outer periphery of thesubstrate mounting plate; a gas supplier including the gas supplystructure and configured to control a supply amount of a gas suppliedfrom the gas supply structure; a gas exhaust structure installed abovethe substrate mounting plate at a downstream side of the gas supplystructure in a rotation direction; a gas exhauster including the gasexhaust structure and configured to control an exhaust amount of a gasexhausted from the gas exhaust structure; and a gas main componentamount controller including the gas supplier and the gas exhauster andconfigured to control a gas main component amount in the gas suppliedfrom the gas supply structure to the substrates, wherein the gas maincomponent amount controller is further configured to control the gasmain component amount in the gas supplied to the substrates from thecenter to the outer periphery of the substrate mounting plate.
 2. Thesubstrate processing apparatus of claim 1, wherein, when each of thesubstrates is in a state where pillars forming a plurality of groovesare formed in a plane, the gas main component amount controller isfurther configured to control such that an exposure amount of the gassupplied from the gas supply structure into a middle region of each ofthe substrates is larger than an exposure amount of the gas suppliedfrom the gas supply structure to a lateral region of each of thesubstrates.
 3. The substrate processing apparatus of claim 2, whereinthe gas supplier is further configured to supply the gas supplied fromthe gas supply structure at a constant supply amount from the center tothe outer periphery of the substrate mounting plate, wherein a firstdistance is set between the gas supply structure and the gas exhauststructure at a location through which the middle region of each of thesubstrates passes, and wherein a second distance shorter than the firstdistance is set between the gas supply structure and the gas exhauststructure at a location through which the lateral region of each of thesubstrates passes.
 4. The substrate processing apparatus of claim 2,wherein the gas main component amount controller is further configuredto increase the gas main component amount from the center to the outerperiphery of the substrate mounting plate.
 5. The substrate processingapparatus of claim 2, wherein a gas supply hole is formed in the gassupply structure from the center to the outer periphery of the substratemounting plate, and the gas supply hole is configured to be inclinedwith respect to a surface of each of the substrates.
 6. The substrateprocessing apparatus of claim 1, wherein the gas supplier is furtherconfigured to supply the gas at a constant supply amount from the centerto the outer periphery of the substrate mounting plate, wherein a firstdistance is set between the gas supply structure and the gas exhauststructure at a location through which a middle region of each of thesubstrates passes, and wherein a second distance shorter than the firstdistance is set between the gas supply structure and the gas exhauststructure at a location through which the lateral region of each of thesubstrates passes.
 7. The substrate processing apparatus of claim 6,wherein the first distance and the second distance are set according tosurface areas of grooves formed in the middle region and the lateralregion.
 8. The substrate processing apparatus of claim 6, wherein thegas main component amount controller is configured to increase the gasmain component amount from the center to the outer periphery of thesubstrate mounting plate.
 9. The substrate processing apparatus of claim6, wherein a gas supply hole is formed in the gas supply structure fromthe center to the outer periphery of the substrate mounting plate, andthe gas supply hole is configured to be inclined with respect to asurface of each of the substrates.
 10. The substrate processingapparatus of claim 1, wherein the gas main component amount controlleris configured to increase the gas main component amount from the centerto the outer periphery of the substrate mounting plate.
 11. Thesubstrate processing apparatus of claim 10, wherein at least one gassupply hole is formed in the gas supply structure from the center to theouter periphery of the substrate mounting plate, and the at least onegas supply hole is configured to be inclined with respect to a surfaceof each of the substrates.
 12. The substrate processing apparatus ofclaim 11, wherein the at least one gas supply hole includes a pluralityof gas supply holes, and wherein the gas supply holes are configured tobe inclined such that the gas supply holes gradually face toward thesurface of each of the substrates from the center to the outer peripheryof the substrate mounting plate.
 13. The substrate processing apparatusof claim 12, wherein each of the gas supply holes is further configuredto gradually approach the surface of each of the substrates from thecenter to the outer periphery of the substrate mounting plate.
 14. Thesubstrate processing apparatus of claim 11, wherein the at least one gassupply hole includes a plurality of gas supply holes, and wherein eachof the gas supply holes is further configured to gradually approach thesurface of each of the substrates from the center to the outer peripheryof the substrate mounting plate.
 15. The substrate processing apparatusof claim 1, wherein at least one gas supply hole is formed in the gassupply structure from the center to the outer periphery of the substratemounting plate, and the at least one gas supply hole is configured to beinclined with respect to a surface of each of the substrates.
 16. Thesubstrate processing apparatus of claim 15, wherein the at least one gassupply hole includes a plurality of gas supply holes, and wherein thegas supply holes are configured to be inclined such that the gas supplyholes gradually face toward the surface of each of the substrate fromthe center to the outer periphery of the substrate mounting plate. 17.The substrate processing apparatus of claim 16, wherein each of the gassupply holes is further configured to gradually approach the surface ofeach of the substrates from the center to the outer periphery of thesubstrate mounting plate.
 18. The substrate processing apparatus ofclaim 15, wherein the at least one gas supply hole includes a pluralityof gas supply holes, and wherein each of the gas supply holes isconfigured to gradually approach the surface of each of the substratesfrom the center to the outer periphery of the substrate mounting plate.